FSM - FSM - CV de Ahmed Rebey

Ahmed Rebey

Ahmed.Rebey@fsm.rnu.tn

Informations générales
Spécialités
Scolarité & Diplômes
Enseignements
Activités de recherche
Expérience professionnelle
Vie associative
Autres

Informations générales

Nom & Prénom :	Rebey Ahmed
Date de naissance :	Lundi 10 Mars 1969 à Menzel Habib - Gabès
Situation familiale :	Marié

Email :	Ahmed.Rebey@fsm.rnu.tn
Adresse :	Professeur Ahmed Rebey Faculté des Sciences de Monastir 5019-TUNISIE.
Télécharger Curriculum vitae

Spécialités

Physique de solides

Scolarité & Diplômes

Baccalauréat :

Maths-Sciences. Lycée Mixte Med Ali El Hamma-Gabès.

D.E.U.S :

- PC1. Faculté des Sciences de Monastir.
- PC2. Faculté des Sciences de Monastir.

MAITRISE :

- P3. Faculté des Sciences de Monastir.
- P4. Faculté des Sciences de Monastir.

D.E.A :

- A.E.A Physique des Solides. Faculté des Sciences de Tunis.

- D.E.A Physique des Solides. Faculté des Sciences de Tunis.

THESE de doctorat : Faculté des Sciences de Tunis.

Habilitation universitaire : Faculté des Sciences de Tunis.

Enseignements

- Assistant vacataire (94) : Faculté des Sciences de Monastir.

- Assistant contractuel (95) : Faculté des Sciences de Monastir.

- Assistant (98) : Faculté des Sciences de Monastir.

- Maitre assistant (2000) : Faculté des Sciences de Monastir.

- Maitre de conférences (2005) : Faculté des Sciences de Monastir.

- Professeur depuis 2011 : Faculté des Sciences de Monastir.

Publications

Généralités:

- Elaboration des semiconducteurs (III-V arséniures et III-V nitrures) par épitaxie en phase vapeur par pyrolyse d'organométalliques (EPVOM ou MOVPE ou dite MOCVD),
- Caractérisation des semiconducteurs (III-V arséniures et III-V nitrures):
    optique
    * Réflectivité muli-ondes, (UV-VIS-IR),
    * Absorption,
    * Photoreflectivité (PR),
    * Photoluminescence (PL),
    Electrique
     * Effet Hall
   Structural
      * diffraction de Rayons-X à Haute Résolution (HRXRD)
- Calcul théorique:
   * calcul ab-initio des propriétés physiques des matériaux,
   * calcul de structures de bandes en se basant sur la méthode BAC des matériaux à grand mismatch     (bismide and nitride)
   * calcul self consistent de structures quantiques.

20 of 50 documents (newest first)

Habchi, M.M., Massoudi, I., Rebey, A., Ben Chaâbane, R., El Jani, B.

Analysis of the VIS-NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE

(2014) Journal of Crystal Growth 395 PP. 26 - 30

doi: 10.1016/j.jcrysgro.2014.03.001

Boussaha, R., Fitouri, H., Rebey, A., Jani, B.E.

Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy

(2014) Applied Surface Science 291 PP. 40 - 44

doi: 10.1016/j.apsusc.2013.10.120

Zaied, I., Fitouri, H., Chine, Z., Rebey, A., El Jani, B.

Atmospheric-pressure metal-organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates

(2014) Journal of Physics and Chemistry of Solids 75 (2) PP. 244 - 251

doi: 10.1016/j.jpcs.2013.09.024

Habchi, M.M., Tounsi, N., Bedoui, M., Zaied, I., Rebey, A., El Jani, B.

Structural and optical properties of InxGa1-xAs strained layers grown on GaAs substrates by MOVPE

(2014) Physica E: Low-Dimensional Systems and Nanostructures 56 PP. 74 - 78

doi: 10.1016/j.physe.2013.08.017

Habchi, M.M., Ben Nasr, A., Rebey, A., El Jani, B.

Electronic band structure calculation of GaNAsBi alloys and effective mass study

(2013) Infrared Physics and Technology 61 PP. 88 - 93 Cited 1 times.

doi: 10.1016/j.infrared.2013.07.012

Fitouri, H., Boussaha, R., Rebey, A., El Jani, B.

Oxidation of bismuth nanodroplets deposit on GaAs substrate

(2013) Applied Physics A: Materials Science and Processing 112 (3) PP. 701 - 710

doi: 10.1007/s00339-013-7759-3

Tounsi, N., Habchi, M.M., Chine, Z., Rebey, A., El Jani, B.

Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence

(2013) Superlattices and Microstructures 59 PP. 133 - 143 Cited 1 times.

doi: 10.1016/j.spmi.2013.04.009

Mbarki, M., Alaya, R., Rebey, A.

Ab initio investigation of structural and electronic properties of zinc blende AlN1-xBix alloys

(2013) Solid State Communications 155 PP. 12 - 15

doi: 10.1016/j.ssc.2012.10.031

Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy

(2012) Journal of Crystal Growth 353 (1) PP. 77 - 82 Cited 3 times.

doi: 10.1016/j.jcrysgro.2012.05.010

Mbarki, M., Rebey, A.

First principles calculations of structural and electronic properties of GaN 1-xBi x alloys

(2012) Journal of Alloys and Compounds 530 PP. 36 - 39 Cited 1 times.

doi: 10.1016/j.jallcom.2012.03.088

Mzoughi, T., Fitouri, H., Moussa, I., Rebey, A., El Jani, B.

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

(2012) Journal of Alloys and Compounds 524 PP. 26 - 31

doi: 10.1016/j.jallcom.2012.01.160

Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures

(2012) Physica E: Low-Dimensional Systems and Nanostructures 44 (7-8) PP. 1282 - 1287 Cited 2 times.

doi: 10.1016/j.physe.2012.02.002

Massoudi, I., Habchi, M.M., Rebey, A., El Jani, B.

In situ spectral reflectance investigation of InAs/GaAs heterostructures grown by MOVPE

(2012) Journal of Electronic Materials 41 (3) PP. 498 - 505 Cited 3 times.

doi: 10.1007/s11664-011-1809-4

Mbarki, M., Rebey, A.

First-principles calculation of the physical properties of GaAs 1-xBix alloys

(2011) Semiconductor Science and Technology 26 (10) Cited 5 times.

doi: 10.1088/0268-1242/26/10/105020

Chine, Z., Fitouri, H., Zaied, I., Rebey, A., El Jani, B.

Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy

(2011) Journal of Crystal Growth 330 (1) PP. 35 - 38 Cited 5 times.

doi: 10.1016/j.jcrysgro.2011.04.047

Fitouri, H., Moussa, I., Rebey, A., El Jani, B.

Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

(2011) Microelectronic Engineering 88 (4) PP. 476 - 479 Cited 5 times.

doi: 10.1016/j.mee.2010.11.016

Ben Naceur, H., Mzoughi, T., Moussa, I., Nguyen, L., Rebey, A., El Jani, B.

Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (1 0 0) GaAs substrates

(2010) Physica E: Low-Dimensional Systems and Nanostructures 43 (1) PP. 106 - 110 Cited 1 times.

doi: 10.1016/j.physe.2010.06.028

Ben Naceur, H., Mzoughi, T., Moussa, I., Rebey, A., El Jani, B.

Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal-organic vapor phase epitaxy

(2010) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 268 (3-4) PP. 236 - 240

doi: 10.1016/j.nimb.2009.09.018

Ben Naceur, H., Moussa, I., Tottereau, O., Rebey, A., El Jani, B.

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

(2009) Physica E: Low-Dimensional Systems and Nanostructures 41 (10) PP. 1779 - 1783 Cited 4 times.

doi: 10.1016/j.physe.2009.06.083

Ben Sedrine, N., Moussa, I., Fitouri, H., Rebey, A., El Jani, B., Chtourou, R.

Spectroscopic ellipsometry study of GaAs1-xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy

(2009) Applied Physics Letters 95 (1) Cited 2 times.

doi: 10.1063/1.3167359

Encadrements

Expérience professionnelle

Actuellemnt Directeur du Département de Physique

Membre association

Autres

Nouveautés

Faculté

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École doctorale

Recherche

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FSM - CV de Ahmed Rebey